...Y.-B. Chen; Z. M. Zhang; P. J. Timans Temperature nonuniformity is a critical problem in rapid thermal processing (RTP) of wafers because it leads to uneven diffusion of implanted dopants and introduces thermal stress. One cause of the problem is nonuniform absorption of thermal radiation...

...David J. Frankman; Brent W. Webb; Matthew R. Jones A major obstacle to the widespread implementation of rapid thermal processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers are used to measure wafer temperatures in RTP reactors. While...

...Y. H. Zhou; Z. M. Zhang This paper presents a Monte Carlo model for prediction of the radiative properties of semitransparent silicon wafers with rough surfaces. This research was motivated by the need of accurate temperature measurement in rapid thermal processing (RTP) systems. The methods...

... visualisation temperature measurement jets chaos flow instability rapid thermal processing convection Rayleigh scattering Experimental Mixed Convection Temperature Thin Films Transient The formation of thin films of semiconductors is an important technology...