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Keywords: thin film circuits
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Journal Articles

Evaluation of the Dominant Factor for Electromigration in Sputtered High Purity Al Films

X. Zhao, M. Saka, M. Yamashita, F. Togoh
Journal: Journal of Electronic Packaging
Publisher: ASME
Article Type: Research Papers
J. Electron. Packag. June 2010, 132(2): 021003.
https://doi.org/10.1115/1.4001687
Published Online: June 11, 2010
... thin film circuits EM high purity Al film grain boundary diffusion AFD activation energy Thin films, which are thin material layers ranging from fractions of a nanometer to several micrometers in thickness, play an important role in microelectronic devices. Typically, aluminum (Al...
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Topics: Current density, Diffusion (Physics), Electrodiffusion, Grain boundary diffusion, Grain size, Temperature, Sputtering (Irradiation), Circuits, Damage, Strips
Journal Articles

Viscoelastic Characterization of Low-Dielectric Constant SiLK Films Using Nanoindentation in Combination With Finite Element Modeling

J. M. J. den Toonder, Y. Ramone, A. R. van Dijken, J. G. J. Beijer, G. Q. Zhang
Journal: Journal of Electronic Packaging
Publisher: ASME
Article Type: Research Papers
J. Electron. Packag. September 2005, 127(3): 276–285.
https://doi.org/10.1115/1.1938990
Published Online: August 12, 2004
.... 21 06 2004 12 08 2004 integrated circuit packaging integrated circuit interconnections integrated circuit modelling integrated circuit reliability integrated circuit testing finite element analysis indentation viscoelasticity dielectric materials polymer films thin film...
View Article titled, Viscoelastic Characterization of Low-Dielectric Constant SiLK Films Using Nanoindentation in Combination With Finite Element Modeling
Open the PDF for Viscoelastic Characterization of Low-Dielectric Constant SiLK Films Using Nanoindentation in Combination With Finite Element Modeling in another window
Topics: Creep, Finite element analysis, Modeling, Nanoindentation, Stress, Viscoelasticity, Manganese (Metal), Silicon, Relaxation (Physics), Displacement