As a solid electroluminescent source, white light emitting diode (LED) has entered a practical stage and become an alternative to replace incandescent and fluorescent light sources. However, due to the increasing integration and miniaturization of LED chips, heat flux inside the chip is also increasing, which puts the packaging into the position to meet higher requirements of heat dissipation. In this study, a new interconnection material—nanosilver paste is used for the LED chip packaging to pursue a better optical performance, since high thermal conductivity of this material can help improve the efficiency of heat dissipation for the LED chip. The bonding ability of this new die-attach material is evaluated by their bonding strength. Moreover, high-power LED modules connected with nanosilver paste, solder, and silver epoxy are aged under hygrothermal aging and temperature cycling tests. The performances of these LED modules are tested at different aging time. The results show that LED modules sintered with nanosilver paste have the best performance and stability.
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e-mail: xchen@tju.edu.cn
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September 2010
Research Papers
Reliability of High-Power Light Emitting Diode Attached With Different Thermal Interface Materials
Xin Li,
Xin Li
School of Material Science and Engineering,
Tianjin University
, Tianjin, 300072, P.R. China; Tianjin Key Laboratory of Advanced Joining Technology
, Tianjin, 300072, P.R. China
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Xu Chen,
Xu Chen
School of Chemical Engineering and Technology,
e-mail: xchen@tju.edu.cn
Tianjin University
, Tianjin, 300072, P.R. China; Tianjin Key Laboratory of Advanced Joining Technology
, Tianjin, 300072, P.R. China
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Guo-Quan Lu
Guo-Quan Lu
Department of Material Science and Engineering,
Virginia Polytechnic Institute and State University
, 213 Holden Hall, M/C 0237, Blacksburg, VA 24061; School of Material Science and Engineering, Tianjin University
, Tianjin, 300072, P.R. China
Search for other works by this author on:
Xin Li
School of Material Science and Engineering,
Tianjin University
, Tianjin, 300072, P.R. China; Tianjin Key Laboratory of Advanced Joining Technology
, Tianjin, 300072, P.R. China
Xu Chen
School of Chemical Engineering and Technology,
Tianjin University
, Tianjin, 300072, P.R. China; Tianjin Key Laboratory of Advanced Joining Technology
, Tianjin, 300072, P.R. Chinae-mail: xchen@tju.edu.cn
Guo-Quan Lu
Department of Material Science and Engineering,
Virginia Polytechnic Institute and State University
, 213 Holden Hall, M/C 0237, Blacksburg, VA 24061; School of Material Science and Engineering, Tianjin University
, Tianjin, 300072, P.R. ChinaJ. Electron. Packag. Sep 2010, 132(3): 031011 (5 pages)
Published Online: September 30, 2010
Article history
Received:
November 16, 2009
Revised:
July 6, 2010
Online:
September 30, 2010
Published:
September 30, 2010
Citation
Li, X., Chen, X., and Lu, G. (September 30, 2010). "Reliability of High-Power Light Emitting Diode Attached With Different Thermal Interface Materials." ASME. J. Electron. Packag. September 2010; 132(3): 031011. https://doi.org/10.1115/1.4002299
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