The aim of this work is to evaluate the changes in microstructures and electrical properties of a tantalum nitride (Ta–N) thin film integrated on an aluminum anodization multichip module deposited (MCM-D) substrate. A Ta–N resistor with a thickness of 100 nm was integrated at the bottom layer of the MCM-D substrate using rf reactive sputtering. Effects of aluminum anodization process on the Ta–N thin film resistor were studied. The results show that the oxide bulges composed of Ta2O5 and Ta–O–N are formed at the Ta–N film surface due to the effect of the upper layer of porous anodic alumina. The resistivity and the temperature coefficient of resistance of the Ta–N resistor remain unchanged. The integrated resistor is more stable owing to the protection of the oxide bulges.

1.
Licari
,
J.
, 1995,
Multichip Module Design, Fabrication, and Testing
,
McGraw-Hill
,
New York
.
2.
Adema
,
G.
,
Berry
,
M.
, and
Turlik
,
I.
, 1992, “
Via Formation in Thin Films Multichip Module
,”
Electronic Packaging & Production
,
11
, pp.
54
66
.
3.
Surganov
,
V.
, and
Mozalev
,
A.
, 1997, “
Planar Aluminum Interconnection Formed by Electrochemical Anodizing Technique
,”
Microelectron. Eng.
0167-9317,
37–38
, pp.
329
334
.
4.
Hurwitz
,
D.
,
Igner
,
E.
,
Yofis
,
B.
, and
Katz
,
D.
, 1998,
International Conference on Multichip Modules and High Density Packaging
, Denver, CO, Apr. 15–17, p.
98
.
5.
Lazarouk
,
S.
,
Katsouba
,
S.
,
Demianovich
,
A.
,
Stanovski
,
V.
,
Voitech
,
S.
,
Vysotski
,
V.
, and
Ponomar
,
V.
, 2000, “
Reliability of Built in Aluminum Interconnection With Low-ϵ Dielectric Based on Porous Anodic Alumina
,”
Solid-State Electron.
0038-1101,
44
, pp.
815
818
.
6.
Kang
,
S. M.
,
Yoon
,
S. G.
,
Suh
,
S. J.
, and
Yoon
,
D. H.
, 2008, “
Control of Electrical Resistivity of TaN Thin Films by Reactive Sputtering for Embedded Passive Resistors
,”
Thin Solid Films
0040-6090,
516
, pp.
3568
3571
.
7.
Sulka
,
G. D.
, and
Parkoła
,
K. G.
, 2007, “
Temperature Influence on Well-Ordered Nanopore Structures Grown by Anodization of Aluminium in Sulphuric Acid
,”
Electrochim. Acta
,
52
, pp.
1880
1888
. 0013-4686
8.
Mei
,
Y. F.
,
Huang
,
G. S.
,
Li
,
Z. M.
,
Siu
,
G. G.
,
Fu
,
R. K. Y.
,
Yang
,
Y. M.
,
Wu
,
X. L.
,
Tang
,
Z. K.
, and
Chu
,
P. K.
, 2004, “
Formation of Si-Based Nano-Island Array on Porous Anodic Alumina
,”
Acta Mater.
1359-6454,
52
, pp.
5633
5637
.
9.
Asoh
,
H.
,
Oide
,
A.
, and
Ono
,
S.
, 2005, “
Fabrication of Self-Ordered Nanohole Arrays on Si by Localized Anodization and Subsequent Chemical Etching
,”
Appl. Surf. Sci.
,
252
, pp.
1668
1673
. 0169-4332
10.
Mozalev
,
A.
,
Mozaleva
,
I.
,
Sakairi
,
M.
, and
Takahashi
,
H.
, 2005, “
Anodic Film Growth on Al Layers and Ta–Al Metal Bilayers in Citric Acid Electrolytes
,”
Electrochim. Acta
0013-4686,
50
, pp.
5065
5075
.
11.
Fan
,
S. S.
,
Chapline
,
M. G.
,
Franklin
,
N. R.
,
Tombler
,
T. W.
,
Cassell
,
A. M.
, and
Dai
,
H.
, 1999, “
Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties
,”
Science
0036-8075,
283
, pp.
512
514
.
12.
Mozalev
,
A.
,
Surganov
,
A.
, and
Maganio
,
S.
, 1999, “
Anodic Process for Forming Nanostructured Metal-Oxide Coatings for Large-Value Precise Microfilm Resistor Fabrication
,”
Electrochim. Acta
0013-4686,
44
, pp.
3891
3898
.
13.
Che
,
G.
,
Lakshmi
,
B. B.
,
Fisher
,
E. R.
, and
Martin
,
C. R.
, 1998, “
Carbon Nanotubule Membranes for Electrochemical Energy Storage and Production
,”
Nature (London)
0028-0836,
393
, pp.
346
349
.
14.
Vorobyova
,
A. I.
, and
Outkina
,
E.
, 1998, “
Study of Pillar Microstructure Formation With Anodic Oxides
,”
Thin Solid Films
0040-6090,
324
, pp.
1
10
.
15.
Pringle
,
J. P. S.
, 1973, “
Transport Numbers of Metal and Oxygen During the Anodic Oxidation of Tantalum
,”
J. Electrochem. Soc.
0013-4651,
120
, pp.
398
407
.
16.
Riekkinen
,
T.
,
Molarius
,
J.
,
Laurila
,
T.
,
Nurmela
,
A.
,
Suni
,
I.
, and
Kivilahti
,
J.
, 2002, “
Reactive Sputter Deposition and Properties of TaxN Thin Films
,”
Microelectron. Eng.
0167-9317,
64
, pp.
289
297
.
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