The aim of this work is to evaluate the changes in microstructures and electrical properties of a tantalum nitride (Ta–N) thin film integrated on an aluminum anodization multichip module deposited (MCM-D) substrate. A Ta–N resistor with a thickness of 100 nm was integrated at the bottom layer of the MCM-D substrate using rf reactive sputtering. Effects of aluminum anodization process on the Ta–N thin film resistor were studied. The results show that the oxide bulges composed of and Ta–O–N are formed at the Ta–N film surface due to the effect of the upper layer of porous anodic alumina. The resistivity and the temperature coefficient of resistance of the Ta–N resistor remain unchanged. The integrated resistor is more stable owing to the protection of the oxide bulges.
Skip Nav Destination
Article navigation
March 2009
Research Papers
Integration of Ta–N Thin Film Resistors on Anodic Alumina MCM-D Substrate
Dapeng Zhu,
Dapeng Zhu
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, China
Search for other works by this author on:
Xiaoqin Lin,
Xiaoqin Lin
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, China
Search for other works by this author on:
Le Luo
Le Luo
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, China
Search for other works by this author on:
Dapeng Zhu
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, China
Xiaoqin Lin
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, China
Le Luo
Shanghai Institute of Microsystem and Information Technology,
Chinese Academy of Sciences
, Shanghai 200050, ChinaJ. Electron. Packag. Mar 2009, 131(1): 011006 (4 pages)
Published Online: February 12, 2009
Article history
Received:
December 18, 2007
Revised:
June 16, 2008
Published:
February 12, 2009
Citation
Zhu, D., Lin, X., and Luo, L. (February 12, 2009). "Integration of Ta–N Thin Film Resistors on Anodic Alumina MCM-D Substrate." ASME. J. Electron. Packag. March 2009; 131(1): 011006. https://doi.org/10.1115/1.3068305
Download citation file:
Get Email Alerts
Cited By
Enhancing Mechanical Reliability of Silver-Sintered Joints With Copper Nanowires in High-Power Electronic Devices
J. Electron. Packag (December 2024)
Special Issue on InterPACK2023
J. Electron. Packag (December 2024)
Impact of Encapsulated Phase Change Material Additives for Improved Thermal Performance of Silicone Gel Insulation
J. Electron. Packag (December 2024)
Related Articles
Flexible Profile Compact Thermal Models for Practical Geometries
J. Electron. Packag (September,2007)
Partially Oxidized Tantalum Carbonitride as New Cathodes Without Platinum Group Metals for Polymer Electrolyte Fuel Cell
J. Fuel Cell Sci. Technol (June,2011)
Migration of Radio-Opaque Markers Injected Into Tendon Grafts: A Study Using Roentgen Stereophotogrammetric Analysis (RSA)
J Biomech Eng (October,2005)
An Assessment of Module Cooling Enhancement With Thermoelectric Coolers
J. Heat Transfer (January,2005)
Related Proceedings Papers
Related Chapters
A Review on Prediction over Pressured Zone in Hydrocarbon Well Using Seismic Travel Time through Artificial Intelligence Technique for Pre-Drilling Planing
International Conference on Software Technology and Engineering, 3rd (ICSTE 2011)
Hydro Tasmania — King Island Case Study
Energy and Power Generation Handbook: Established and Emerging Technologies
Area-Efficient Reverse Voltage Protection for Low Dropout Regulator
International Conference on Instrumentation, Measurement, Circuits and Systems (ICIMCS 2011)