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Research Papers

An Improved Design of the Substrate of Stretchable Gallium Arsenide Photovoltaics

[+] Author and Article Information
Jinsheng Zhao

Applied Mechanics and Structure Safety Key
Laboratory of Sichuan Province,
School of Mechanics and Engineering,
Southwest Jiaotong University,
Chengdu, 610031, China;
Key Laboratory of Advanced
Technologies of Materials,
Ministry of Education of China,
Chengdu, 610031, China
e-mail: zhaojinsh@yeah.net

Yizhe Zhang

Applied Mechanics and Structure Safety Key
Laboratory of Sichuan Province,
School of Mechanics and Engineering,
Southwest Jiaotong University,
Chengdu, 610031, China;
Key Laboratory of Advanced
Technologies of Materials,
Ministry of Education of China,
Chengdu, 610031, China
e-mail: yz_zhang1991@163.com

Xiangyu Li

Applied Mechanics and Structure Safety Key
Laboratory of Sichuan Province,
School of Mechanics and Engineering,
Southwest Jiaotong University,
Chengdu, 610031, China;
Key Laboratory of Advanced
Technologies of Materials,
Ministry of Education of China,
Chengdu, 610031, China
e-mail: zjuparis6@hotmail.com

Mingxing Shi

Applied Mechanics and Structure Safety Key
Laboratory of Sichuan Province,
School of Mechanics and Engineering,
Southwest Jiaotong University,
Chengdu, 610031, China;
Key Laboratory of Advanced
Technologies of Materials,
Ministry of Education of China,
Chengdu, 610031, China
e-mail: shimingxing1972@163.com

1Corresponding author.

Contributed by the Applied Mechanics Division of ASME for publication in the JOURNAL OF APPLIED MECHANICS. Manuscript received November 9, 2018; final manuscript received December 17, 2018; published online January 8, 2019. Assoc. Editor: Yong Zhu.

J. Appl. Mech 86(3), 031009 (Jan 08, 2019) (11 pages) Paper No: JAM-18-1634; doi: 10.1115/1.4042320 History: Received November 09, 2018; Revised December 17, 2018

A new design has been proposed and numerically analyzed for the polydimethylsiloxane (PDMS) substrate of gallium arsenide (GaAs) photovoltaics. A stack structure is realized by inserting a cube between island and basement, and thus, a support structure of basement-cube-island is formed. Numerical analyses show that, as the deformation of GaAs layer and interfacial stresses are concerned, the height of the stack structure of only island and cube has direct effect on deformation isolation. Especially, the length of the inserted cube can dramatically increase this effect. Therefore, when a cube is inserted between island and basement, a thin photovoltaic film can be realized with reliable performance. As stretch is applied to the film, the thickness of encapsulation is still the dominant factor on deformation of GaAs layer and interfacial stresses, and the length of cube only has slight effect on the influence.

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Figures

Grahic Jump Location
Fig. 1

(a) Schematic show of stretchable GaAs photovoltaics with the structured substrate and (b) side view of stretchable GaAs photovoltaics with a new design of the elastomeric substrate

Grahic Jump Location
Fig. 2

(a)–(d) Schematic show of the four FEA models (left) and the configurations when simulations are done (right). In models 1 and 4, loadings are imposed in the analyses and accordingly the loading boundary conditions are indicated in (a) and (d). The symmetry boundary conditions are the same for all the four FEA models and included only in (a) for simplicity. See text for details.

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Fig. 3

The maximum nominal in-plane strain εxx of island top surface. See text for definition of εxx.

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Fig. 4

The maximum out-of-plane displacement of island top surface divided by half the island length

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Fig. 5

Schematic show of the initial state (solid line) and deformed state (dotted line) of island top surface (half is shown due to symmetry). The symbol θ denotes the relative out-of-plane displacement (see text for details), φ the rotation angle of side surface of island.

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Fig. 6

The maximum internal strain of GaAs layer along axis x or y direction based on FEA model with substrate and solar cell included

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Fig. 7

The maximum interfacial normal stress σzz based on FEA model with substrate and solar cell included

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Fig. 8

The maximum interfacial shear stress σxz based on FEA model with substrate and solar cell included

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Fig. 9

The maximum internal strain of GaAs layer along axis x or y direction based on FEA model with substrate and network of solar cell and interconnects included

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Fig. 10

The maximum interfacial normal stress σzz based on FEA model with substrate and network of solar cell and interconnects included

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Fig. 11

The maximum interfacial shear stress σxz based on FEA model with substrate and network of solar cell and interconnects included

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Fig. 12

The variation of interfacial shear stress σxz along center line under a biaxial stretch of strain 20%: (a) shows the cases with an encapsulation layer of fixed thickness 60 μm but the ratio lcube/lisland varying from 0.25 to 1.00 by a step of 0.25 and (b) portrays the cases with the ratio lcube/lisland fixed at 0.5 but the thickness of encapsulation layer changing among 20, 60, and 100 μm, respectively

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Fig. 13

The maximum interfacial shear stress between encapsulation layer and solar cell is portrayed as the thickness of encapsulation layer varies from 20 μm to 100 μm by a step size of 20 μm with different ratios lcube/lisland considered

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Fig. 14

(a) The variation of interfacial normal stress σzz along center line under a biaxial stretch of strain 20% and (b) side view of the final deformed configuration of a representative unit of whole structure

Grahic Jump Location
Fig. 15

The maximum internal strain in GaAs layer along axis x or y direction is portrayed as the thickness of encapsulation layer varies from 20 μm to 100 μm by a step size of 20 μm with different ratios lcube/lisland considered

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