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Research Papers

Dislocation Loop in Isotropic Bimaterial With Linear Springlike Imperfect Interface

[+] Author and Article Information
Wenwang Wu, Jinhuan Zhang

State Key Laboratory of Automotive
Safety and Energy,
Tsinghua University,
Beijing 100084, China

Shucai Xu

State Key Laboratory of Automotive
Safety and Energy,
Tsinghua University,
Beijing 100084, China
e-mail: xushc@tsinghua.edu.cn

Cunjing Lv

Department of Engineering Mechanics,
Tsinghua University,
Beijing 100084, China

Re Xia

Key Laboratory of Hubei Province for Water
Jet Theory and New Technology,
Wuhan University,
Wuhan 430072, China

Contributed by the Applied Mechanics Division of ASME for publication in the JOURNAL OF APPLIED MECHANICS. Manuscript received July 13, 2015; final manuscript received October 27, 2015; published online January 21, 2016. Assoc. Editor: A. Amine Benzerga.

J. Appl. Mech 83(4), 041005 (Jan 21, 2016) (10 pages) Paper No: JAM-15-1363; doi: 10.1115/1.4031893 History: Received July 13, 2015; Revised October 27, 2015

The mobility of dislocations and their interaction with interfaces in nanocrystal and multilayers affect the mechanical behaviors of the material, depending on material compositions and interface conditions. In this paper, a semi-analytical solution is developed for calculating the elastic fields of dislocation loops within isotropic bimaterials with linear springlike imperfect interface models. Calculation examples of dislocation loops within Al–Cu bimaterials are performed, which demonstrate the reliability of the semi-analytical approach. The effects of constant matrix on the interface elastic fields are studied, showing that the interface constant matrix can influence the elastic fields drastically. Comparisons between perfect bonding and imperfect interface models are performed to study the effects of interface imperfection conditions on the in-plane and out-of-plane elastic fields across the bimaterial interface plane.

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Figures

Grahic Jump Location
Fig. 1

ITS diagram of bimaterial systems containing dislocation loops L1 and L2 within the upper and lower half-spaces, where the upper half-space is composed of medium A and the lower half-space is composed of medium B, respectively: (a) bulk stresses {σijbulk}+ and {σijbulk}−, (b) image stresses {σijimage}+ and {σijimage}−, (c) ITS {σijITS}+ and {σijITS}−, and (d) linear springlike interface conditions are satisfied after free surface relaxation and ITS superimposition

Grahic Jump Location
Fig. 2

Elastic field at the interface plane of Al–Cu bimaterial with the linear springlike interface model. Interface displacement fields of the upper half-space (unit: nm): (a) {ufinal}+, (b) {vfinal}+, and (c) {wfinal}+. Interface displacement fields of the lower half-space (unit: nm): (d) {ufinal}−, (e) {vfinal}−, and (f) {wfinal}−. ITS fields of the upper half-space (unit: GPa): (g) {σxzfinal}+, (h) {σyzfinal}+, and (i) {σzzfinal}+. ITS fields of the lower half-space (unit: GPa): (j) {σxzfinal}−, (k) {σyzfinal}−, and (l) {σzzfinal}−.

Grahic Jump Location
Fig. 3

Profile at the interface plane of Al–Cu bimaterial with the linear springlike interface model. Interface displacement fields: (a) {u}±, (c) {v}±, and (e) {w}±. ITS fields: (b) {σxz}±, (d){σyz}±, and (f) {σzz}±.

Grahic Jump Location
Fig. 4

Comparison between perfectly bonding and linear springlike interface models ofAl–Cu bimaterial interface elastic field profiles. Interface displacement fields: (a) {ufinal}±, (c) {vfinal}±, and (e) {wfinal}±. ITS fields: (b) {σxzfinal}±, (d) {σyzfinal}±, and (f) {σzzfinal}±.

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