On Source-Limited Dislocations in Nanoindentation

[+] Author and Article Information
M. X. Shi

Department of Theoretical and Applied Mechanics, University of Illinois at Urbana-Champaign, Urbana, IL 61801

Y. Huang

Department of Mechanical and Industrial Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 e-mail: huang9@uiuc.edu

M. Li

Alcoa Technical Center, Alcoa Center, PA 15069

K. C. Hwang

Department of Engineering Mechanics, Tsinghua University, Beijing 100084, P.R. China

J. Appl. Mech 71(3), 433-435 (Jun 22, 2004) (3 pages) doi:10.1115/1.1751185 History: Received August 12, 2002; Revised October 25, 2003; Online June 22, 2004
Copyright © 2004 by ASME
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Grahic Jump Location
The applied pressure (normalized by the Young’s modulus) versus the indentation depth for the 2 μm×2 μm region in Fig. 1 with 6, 18, 53, and 160 slip planes
Grahic Jump Location
Random distribution of dislocation sources (open circles) and obstacles (solid circles) on slip planes (dashed lines). There are 18 slip planes in the 2 μm×2 μm region, with 3 dislocation sources and 11 obstacles on each slip plane. The pressure is applied over a region of 0.4 μm on the top surface.



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