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TECHNICAL PAPERS

Elastic Fields of Quantum Dots in Multilayered Semiconductors: A Novel Green’s Function Approach

[+] Author and Article Information
B. Yang

Structures Technology, Inc., 543 Keisler Drive, Suite 204, Cary, NC 27511   e-mail: boyang@boulder.nist.gov

E. Pan

Department of Civil Engineering, University of Akron, Akron, OH 44325

J. Appl. Mech 70(2), 161-168 (Mar 27, 2003) (8 pages) doi:10.1115/1.1544540 History: Received December 16, 2001; Revised June 08, 2002; Online March 27, 2003
Copyright © 2003 by ASME
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References

Figures

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A multilayered heterostructure with embedded islands of misfit strains
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Point-force Green’s function problem of a multilayered heterostructure (Fig. 1)
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Four examples of a heterostructure with alternating layers of GaAs-spacer and InAs-wetting on a GaAs substrate, plus a fresh wetting layer on the top: (a) a single QD; (b) a vertical array of QDs; (c) a horizontal rectangular array of QDs; (d) a single QD with varying ratio of thickness between top wetting and spacer layers
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Elastic fields on top surface induced by a single QD (Fig. 3a): (a) normalized hydrostatic strain εkk0; (b) normalized vertical displacement component −u3/(ε0a)
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Vertical variation of normalized nonzero strain and stress components over a single QD (Fig. 3a): (a) ε112211) and ε330; (b) σ112211) and σ330 in 1011Pa
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Induced elastic fields along a line (x1,0,0) on top surface due to a vertical array of up to nine QDs (Fig. 3b): (a) normalized hydrostatic strain εkk0; (b) normalized vertical displacement component −u3/(ε0a)
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Induced elastic fields along a line (x1,0,0) on top surface due to a horizontal rectangular array of up to 9×9 QDs (Fig. 3c): (a) normalized hydrostatic strain εkk0; (b) normalized vertical displacement component −u3/(ε0a)
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Variation of elastic fields at three locations on top surface with top wetting layer thickness Lw (Fig. 3d): (a) normalized hydrostatic strain εkk0; (b) normalized vertical displacement component −u3/(ε0a). The results for the extreme case Lw=0 are indicated by symbols.

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