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An Alternative Method of Solving Multilayer Bending Problems

[+] Author and Article Information
C. H. Hsueh

Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6068

S. Lee

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan

T. J. Chuang

Ceramics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8521

J. Appl. Mech 70(1), 151-154 (Jan 23, 2003) (4 pages) doi:10.1115/1.1526123 History: Received March 17, 2002; Revised July 26, 2002; Online January 23, 2003
Copyright © 2003 by ASME
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References

Figures

Grahic Jump Location
Schematics showing bending of a multilayer strip due to residual stresses and external bending: (a) stress-free condition, (b) unconstrained strains due to temperature change ΔT, (c) constrained strain to maintain displacement compatibility, (d) bending induced by asymmetric stresses, and (e) external bending
Grahic Jump Location
Schematics showing (a) equivalent cross section of the bilayer to account for different Young’s moduli between the two layers when the bilayer is subjected to only external bending and (b) the bending axis in the cross section of the bilayer is located at the same position as the neutral axis in the equivalent cross section
Grahic Jump Location
Normalized position of neutral axis as a function of normalized applied bending moment, M/Ests2f−αs)ΔT, for GaAs/Si bilayer systems with tf/ts=0.2

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