Nano Electro Mechanics of Semiconducting Carbon Nanotube

[+] Author and Article Information
S. Peng, K. Cho

Division of Mechanics and Computation, Department of Mechanical Engineering, Stanford University, Palo Alto, CA 94305

J. Appl. Mech 69(4), 451-453 (Jun 20, 2002) (3 pages) doi:10.1115/1.1469003 History: Received March 15, 2001; Revised October 30, 2001; Online June 20, 2002
Copyright © 2002 by ASME
Your Session has timed out. Please sign back in to continue.



Grahic Jump Location
Description of flatness. The degree of flattening is characterized by the parameter η=(D0−d)/D0.
Grahic Jump Location
Flattening of a (8, 0) carbon nanotube with different degrees of deformation up to 40% flattening
Grahic Jump Location
Energy gap as a function of the flatness. Region 1 shows a band gap closing corresponding to a semiconductor-metal transition, and Region 2 shows bandgap reopening leading to metal-semiconductor transition.
Grahic Jump Location
Electronic band structures at different degrees of flattening deformation. Negative energies correspond to valence band state, and positive energies correspond to conduction band states.
Grahic Jump Location
Strain energy per atom as a function of flattening, η




Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In