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TECHNICAL PAPERS

Nano Electro Mechanics of Semiconducting Carbon Nanotube

[+] Author and Article Information
S. Peng, K. Cho

Division of Mechanics and Computation, Department of Mechanical Engineering, Stanford University, Palo Alto, CA 94305

J. Appl. Mech 69(4), 451-453 (Jun 20, 2002) (3 pages) doi:10.1115/1.1469003 History: Received March 15, 2001; Revised October 30, 2001; Online June 20, 2002
Copyright © 2002 by ASME
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References

Figures

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Description of flatness. The degree of flattening is characterized by the parameter η=(D0−d)/D0.
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Flattening of a (8, 0) carbon nanotube with different degrees of deformation up to 40% flattening
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Energy gap as a function of the flatness. Region 1 shows a band gap closing corresponding to a semiconductor-metal transition, and Region 2 shows bandgap reopening leading to metal-semiconductor transition.
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Electronic band structures at different degrees of flattening deformation. Negative energies correspond to valence band state, and positive energies correspond to conduction band states.
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Strain energy per atom as a function of flattening, η

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