Entrance Development of the Weakly Interacted MHD Plane Channel Flow as Affected by Wall Conductances

[+] Author and Article Information
Edward S. Hsia

Nuclear Systems Programs, Space Division, General Electric Company, Cincinnati, Ohio

J. Appl. Mech 38(3), 665-673 (Sep 01, 1971) (9 pages) doi:10.1115/1.3408871 History: Received November 10, 1969; Revised June 15, 1970; Online July 12, 2010


Growth behavior of the weakly interacted laminar MHD flow in the entrance region of a plane channel with electrically conducting walls is investigated by the momentum integral method. In the developing region, the analysis shows that, with moderate magnetic Reynolds number, the nonuniformity of the magnetic field is found to be significant, and the effect of wall conductivity is found to shorten the growth history of the flow field. Numerical results, including local pressure gradient and skin-friction coefficient, are obtained over a range of Hartmann numbers of 0–10, and wall conductance parameter γ, defined as σw h/σa, of 0–20.

Copyright © 1971 by ASME
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